Magneto-quantum oscillations of the Korringa relaxation rate of manganese ion near a two-dimensional electron gas

نویسندگان

  • E. Souto
  • O. A. C. Nunes
  • D. A. Agrello
  • A. L. A. Fonseca
  • Eronides Felisberto da Silva Júnior
چکیده

The Mn ion-spin relaxation rate (Korringa relaxation) in the vicinity of the two-dimensional electrons (2DEG) in a Mn-based semiconductor nanostructures in a quantizing magnetic field was calculated. The Korringa relaxation is an energy-consuming process due to the difference in magnetic moments of localized and electrons spins involved. The mechanism of energy transfer between the Mn spin and the 2DEG is exchange scattering of the Landau electrons with a transition from the e [ sub-band to the e Y sub-band accompanied by a change in the Mn spin. It was found that due to the presence of Landau levels and the spin-split mobility gap, the Korringa relaxation rate oscillates with the magnetic field resembling the oscillations of the resistivity in such systems. Our calculation offers a method of investigating the dynamics of a magnetic ion such as Mn in a 2DEG and provide new information on the exchange parameter as well as information about the 2D electrons themselves. q 2005 Elsevier Ltd. All rights reserved.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Korringa relaxation time of magnetic ion system near a two-dimensional electron gas

Spin relaxation of Mn ions in a (Cd,Mn)Te quantum well with quasi-two-dimensional carriers (Q2DEG) is investigated. The mechanism of energy transfer is spin–flip scattering of Mn spin with electrons making transitions between spin subbands accompanied by a change in the Mn spin. A calculation of the spin–flip scattering rate shows that the Mn spin relaxation rate is proportional to the coupling...

متن کامل

Quantum Interference Control of Ballistic Magneto- resistance in a Magnetic Nanowire Containing Two Atomic- Size Domain Walls

The magnetoresistance of a one-dimensional electron gas in a metallic ferromagnetic nanowire containing two atomic-size domain walls has been investigated in the presence of spin-orbit interaction. The magnetoresistance is calculated in the ballistic regime, within the Landauer-Büttiker formalism. It has been demonstrated that the conductance of a magnetic nanowire with double domain walls...

متن کامل

“ Charge Relaxation Resistance as a Probe of Many - Body Correlations ” Monday , December 12 , 2011 12 : 00 pm MIT Room 4 - 331

Mesoscopic Circuits witness marked non-local effects in their transport properties because of electron coherence. One important consequence is the quantization of the maximum of the DC conductance in one dimension. Here, we extend the concept of universal quantized resistance to the AC regime and we make a connection with the many-body quantum physics of low-energy models. In particular, we int...

متن کامل

Local Field Correction Effect on Dicluster Stopping Power in a Strongly Coupled Two-Dimensional Electron Gas System

We calculate the stopping power for heavy-ion diclusters moving in a strongly coupled two-dimensional electron gas system by using the local field corrected dielectric function at finite temperature. We obtain a parameterized local field correction factor based on a relation between the thermal compressibility and exchange-correlation energy in two-dimension. The interpolated parameter is deriv...

متن کامل

Nonlinear magnetoresistance oscillations in intensely irradiated two-dimensional electron systems induced by multiphoton processes.

We report on magneto-oscillations in differential resistivity of a two-dimensional electron system subject to intense microwave radiation. The period of these oscillations is determined not only by microwave frequency but also by its intensity. A theoretical model based on quantum kinetics at high microwave power captures all important characteristics of this phenomenon which is strongly nonlin...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Microelectronics Journal

دوره 36  شماره 

صفحات  -

تاریخ انتشار 2005